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 ?2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com EGP10A - EGP10K Rev. A EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers July 2007 EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers Features ? Superfast recovery time for high efficiency ? Low forward voltage, high current capability ? Low leakage current ? High surge current capability Absolute Maximum Ratings* Ta = 25 °C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta = 25 °C unless otherwise noted * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Symbol Parameter Value Units IO Average Rectified Current .375 " lead length @ TL = 75°C 1.0 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 30 A PD Total Device Dissipation Derate above 25°C 2.5 17 W mW°C IC Thermal Resistance, Junction to Ambient 50 °C/W TJ, TSTG Junction and Storage Temperature Range -65 ~ 150 °C Parameter Device Units 10A 10B 10C 10D 10F 10G 10J 10K Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C 5.0 100 μA μA Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50 75 nS Maximum Forward Voltage @ 1.0 A 0.95 1.25 1.7 V Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 22 15 pF DO-41 Glass case COLOR BAND DENOTES CATHODE |